BD Transistor Datasheet pdf, BD Equivalent. Parameters and Characteristics. BD NPN Silicon Power Transistors. Designed for Complementary Use with the BD Series at 25°C Case Temperature 10 A Continuous Collector Current . VCER. Collector-Emitter Voltage (RBE = Ω). BD V. BDA. BDB. BDC. VEBO. Emitter-Base Voltage.
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Trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list gd245 all such trademarks.
The datasheet is printed for reference information only. Datasheet identification advance information product status formative or in design first production definition this datasheet contains the design specifications for product development. Preferred devices are motorola recommended choices for future use datasheft best overall value.
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Operating and storage junction temperature range tj, tstg 65 to c thermal characteristics characteristic symbol max. These parameters must be measured using voltagesensing contacts, separate from the current carrying contacts.
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Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a.